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c opyright ruichips semiconductor co . , ltd rev . b C mar ., 2011 www. ruichips .com ru 1h c2 h complementary advanced power mosfet mosfet features pin description applications symbol parameter n - channel p channel unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 100 - 100 v gss gate - source voltage 2 0 2 0 v t j maximum junctio n temperature 1 50 1 50 c t stg storage temperature range - 55 to 1 50 - 55 to 1 50 c i s diode continuous forward current t c =25 c 3.5 - 2 .5 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 14 - 10 a t c = 25 c 3.5 - 2 .5 i d continuous drain current t c = 7 0 c 2.9 - 2 a t c =25 c 2 p d maximum power dissipation t c = 7 0 c 1.3 w r q j a thermal resistance - junction to ambient 62.5 c /w ? n - channel 100 v/ 3.5 a, r ds ( on ) = 75 m w (type ) @ v gs =10v r ds ( on ) = 80 m w (type) @ v gs = 4.5 v ? p - channel - 100 v/ - 2.5 a, r ds ( on ) = 155 m w (type) @ v gs = - 10v r ds ( on ) = 175 m w (type) @ v gs = - 4.5 v ? reliable and rugged ? esd protected ? l ead free and green available ? power management in notebook computer . absolute maximum ratings sop - 8 complementary mosfe t
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 2 www. ruichips .com ru 1h c2 h electrical characteristics ( t a =25 c unless otherwise noted) r u 1h c2 h symbol parameter test condition min. typ. max. unit static characteristics v gs =0v,i ds = 2 50 m a n 100 bv dss drain - sou rce breakdown voltage v gs =0v,i ds = - 2 50 m a p - 100 v v ds = 100 v, v gs =0v 1 t j =85 c n 30 v ds = - 100 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c p - 30 m a v ds =v g s ,i ds =250 m a n 1.5 2 2.7 v gs ( th) gate threshold voltage v ds =v gs ,i ds = - 250 m a p - 1.5 - 2 - 2.7 v v gs = 20 v, v ds =0v n 10 m a i gss gate leakage current v gs = 20 v, v ds =0v p 10 m a v gs = 10 v, i ds = 2 a 75 85 v gs = 4.5 v, i ds = 1.5 a n 80 95 v gs = - 10 v, i ds = - 2 a 155 17 0 r ds ( on ) drain - source on - state resistance v gs = - 4.5 v, i ds = - 1.5 a p 175 1 95 m w d iode characteristics i sd = 1 a, v gs =0v n 1.2 v v sd diode forward voltage i sd = - 1 a, v gs =0v p - 1.2 v n 42 t rr reverse recovery time p 52 ns n 43 q rr reverse recovery charge n - channel i sd = 3.5 a, dl sd /dt=100a/ m s p - channel i sd = - 2 .5 a, dl sd /dt=100a/ m s p 75 nc
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 3 www. ruichips .com ru 1h c2 h electrical characteristics ( t a =25 c unless otherwise noted) notes : pulse width limited by safe op erating area. when mounted on 1 inch square copper boa rd , t 10sec . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . dynamic characteristics n 1520 c iss input capacitance p 1630 n 134 c oss output capacitance p 191 n 62 c rss reverse transfer capacitance n - channel v gs =0v, v ds = 50 v, frequenc y=1.0mhz p - channel v gs =0v, v ds = - 50 v, frequency=1.0mhz p 83 pf n 12 t d ( on ) turn - on delay time p 16 n 24 t r turn - on rise time p 28 n 34 t d ( off ) turn - off delay time p 45 n 18 t f turn - off fall time n - channel v dd = 50 v, r l = 30 w , i ds = 3.5 a, v gen = 1 0v, r g = 6 w p - channel v dd = - 50 v, r l = 30 w , i ds = - 2.5 a, v gen = - 10v, r g = 6 w p 24 ns gate charge characteristics n 18 q g total gate charge p 23 n 4 q gs gate - source charge p 7 n 5 q gd gate - drain charge n - channel v ds = 80 v, v gs = 10 v, i ds = 3.5 a p - channel v ds = - 80 v, v gs = - 10 v, i ds = - 2.5 a p 6 nc
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 4 www. ruichips .com ru 1h c2 h typical characteristics n - channel power dissipation drain curre nt p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) no rmalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 5 www. ruichips .com ru 1h c2 h typical characteristics ( n - channel) output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold vo ltage v gs - gate - source voltage (v) t j - junction temperature (c)
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 6 www. ruichips .com ru 1h c2 h typical characteristics ( n - channel) drain - source on resistance source - drain diode forward normalized on resistance i s - source current ( a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - ga te charge (nc)
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 7 www. ruichips .com ru 1h c2 h typical characteristics ( p - channel) power dissipation drain current p tot - power ( w) - i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe opera tion area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source voltage (v) square wave pulse duration ( sec)
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 8 www. ruichips .com ru 1h c2 h typical characteristics ( p - channel) out put characteristics drain - source on resistance - i d - drain current (a) r ds(on) - on resistance ( m ) - v ds - drain - source voltage (v) - i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage - v gs - gate - source voltage (v) t j - junction temperature (c)
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 9 www. ruichips .com ru 1h c2 h typical characteristics ( p - channel) drain - source on resistance source - drain diode forward normalized on resistance - i s - source current (a) t j - junction temperature (c) - v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) - v gs - gate - source voltage (v) - v ds - drain - source voltage (v) q g - gate charge (nc)
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 10 www. ruichips .com ru 1h c2 h ordering and marking information ru 1h c2 package (available) h : sop - 8 operatin g temperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 11 www. ruichips .com ru 1h c2 h package information sop - 8 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200
c op yright ruichips semiconductor co . , ltd rev . b C mar ., 2011 12 www. ruichips .com ru 1h c2 h customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com i nvestor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal con tact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (8 6 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com

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